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2. A method of fabricating high two dimensional electron gas density yielding zinc oxide heterostructure
Inventors: Shaibal Mukherjee, Abhinav Kranti, Md Arif Khan, Rohit Singh
Patent Application No. 201721010866, Published, September 28, 2018.
Patent No. 368230, Granted, 31 May 2021
1. A method of fabricating zinc oxide based heterostructure for high electron mobility transistor
Inventors: Shaibal Mukherjee, Abhinav Kranti, Rohit Singh, Md Arif Khan
Patent Application No. 201721007309, Published, September 7, 2018.
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